20V N-Channel Enhancement-Mode MOSFET
RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ
RDS(ON), Vgs@2.5V, Ids@3.5A = 38mΩ
RDS(ON), Vgs@4.0V, Ids@4.5A = 30mΩ
RDS(ON), Vgs@4.5V, Ids@4.5A = 28mΩ
RDS(ON), Vgs@10V, Ids@5.0A = 25mΩ
Features
 Advanced trench process technology
 High Density Cell Design For Ultra Low On-Resistance
 High Power and Current handing capability
 Ideal for Li ion battery pack applications

产品名称：8205A锂电池专业MOS管
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